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a patterned single layer graphene resistance temperature ...

by:KJTDQ     2020-05-03
Prefabricated single
Graphite layer (SLGs)
On silica (SiO2)
/Si substrate, nitrogen Silicon (SiN)
A membrane and suspension structure for temperature sensors is proposed.
These graphene temperature sensors act as resistance temperature detectors in a secondary dependence of resistance on temperature in the range between 283 K and 303 k.
The resistance change observed by the graphene temperature sensor is related by the temperature-related electron migration relationship (~T−4)and electron-
Acoustic scattering
By analyzing the transient response of SLG temperature sensors on different substrates, it is found that graphene sensors on SiN films show the highest sensitivity due to low thermal mass, the sensor on si02/Si shows the lowest.
In addition, graphene on the SiN film not only shows the fastest response, but also has better mechanical stability compared to the suspended graphene sensor.
Therefore, the results presented show that SLG-based temperature sensors with extremely low thermal mass can be used in various applications requiring high sensitivity and rapid operation.
Graphene is a single layer of carbon in a honeycomb lattice.
Since the separation of graphene from graphite by micro-mechanical mechanism in 2004, the physical properties of graphene have been widely studied.
The superior physical properties observed by graphene, such as high electron migration, mechanical strength, optical properties and thermal conductivity, have attracted great attention in various applications.
Despite the various physical properties of a singleGraphene layer (SLG)
To date, its thermal performance, such as thermal conductivity, has been measured and predicted.
Compared with metal and carbon nanotubes, the thermal conductivity of graphene is higher (CNT)
There are positive research opportunities in the field of heat pipe management and energy storage applications.
At the nano scale, due to its own reasons, the performance of electronic equipment is affected by high temperature
The excellent thermal properties of graphene are considered to be suitable for both instrument and instrument, as well as for integrated circuit applications.
Recently developed technology for manufacturing complex graphene structures on micro/nano scale makes graphene ideal for temperature sensor applications due to its excellent electrical properties, excellent mechanical strength and high thermal conductivity
To use graphene as a temperature sensor, the relationship between resistance and temperature needs to be characterized to determine a feasible application.
The linear relationship between temperature and conductivity can be used as a Resistance Temperature Detector (RTD)
Like metal, not metal.
A linear relationship can make it work like a thermal resistor, similar to a ceramic or semiconductor.
The increasing demand for faster operating speeds, higher temperature measurement resolutions and micro-functions has triggered searches for new materials in temperature sensing applications such as bolometers and biomedical sensors. In resistance-
Based on the temperature sensor, the initial resistance (
Usually based on 0 c)
And the temperature coefficient of the resistance (TCR)
Is the basic parameter of temperature measurement.
At 0 °c, the resistance range of commercial RTDs is 100 Ω to 1000 Ω.
For most metals used in RTD applications, the TCR is about 10 °c.
A higher TCR value means a higher sensitivity.
Therefore, reducing the thermal mass of the TCR or increasing the sensor helps to reduce the noise, but reduces the sensitivity.
Although SLG has good electrical and thermal properties, important temperature sensing applications have not been studied.
Reducing graphene oxide at the same time (r-GO)
GO film has been used as a temperature sensor.
However, due to the large number of defects and residual oxygen pollution in GO and r-complex carrier scattering
GO sheets limits its resistance-based applications.
In this article, we introduce the micro-
Patterned SLGs placed on silica (SiO)
/Si, Silicon nitrogen (SiN)
Film for temperature sensor and Si wafer with etched rectangular pit.
After describing the details of the manufacturing process, use 4-
Wire measurement technology, used to observe the relationship between resistance and temperature on SLG temperature sensors on various substrates.
In addition, the effect of carrier scattering on the mobility of graphene on different substrates was considered to explain the observed results.
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